Samsung chose Infineon’s MOSFET-based refrigerator inverter design

Samsung’s newly launched refrigerator features Infineon’s MOSFET-based refrigerator inverter design: 600 VCoolMOS PFD7.

According to Infineon, they have been integrated in Samsung’s brand new one-door fridge (RR23A2J3XWX, RR23A2G3WDX), and FDR (French Door Fridge: RF18A5101SR) inverterized refrigerator. Inverterization is an emerging DC to AC conversion trend in contemporary inverter designs. It helps the application run quietly and smoothly while the average power consumption is reduced compared to a traditional on/off control.

“Up to now, the major home appliances market was strongly dominated by modules. It was exciting to see that with our leading MOSFET technologies, we could help our customer Samsung to achieve even higher efficiency levels at lower system cost in such applications”, said Stefan Obersriebnig, Product Line Head High Voltage Conversion of Infineon’s Power & Sensor System Division.

The 600 V CoolMos PFD7 super junction MOSFETs come with a body diode allowing improved soft-recovery index and the fast the industry’s fastest reverse recovery time, according to Infineon. Compared to module-based designs, using MOSFETs enables lower energy consumption especially at light-load conditions, and an efficiency increase of 1.7%. In addition, this innovative approach allows for a heatsink-less design, a 10% reduction in system cost and a longer refrigerator lifetime.